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| AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Lower On-resistance High Speed Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 300V 66m 88A Description AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 IDM IDR IDR(PULSE) PD@TC=25 IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 300 30 88 270 88 1 Units V V A A A A W A mJ Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Avalanche Current 3 3 270 150 30 45 -55 to 150 150 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.833 40 Units /W /W Data and specifications subject to change without notice 1 200805132 AP80N30W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=125 C) o Test Conditions VGS=0V, ID=10mA 2 Min. 300 3 Min. - Typ. 38 113 31 44 40 130 150 115 525 10 Typ. 310 3.5 Max. Units 66 4.5 10 200 0.1 180 V m V S uA uA uA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=300V, VGS=0V VDS=300V, VGS=0V VGS= 30V, VDS=0V ID=80A VDS=240V VGS=10V VDS=150V ID=40A RG=10,VGS=10V RD=3.75 VGS=0V VDS=30V f=1.0MHz Test Conditions IS=80A, VGS=0V IS=12A, VGS=0V dI/dt=100A/s Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Forward On Voltage 2 2 2 5700 9120 Source-Drain Diode Max. Units 1.5 V ns C Reverse Recovery Time Reverse Recovery Charge Notes: 1.PW 10 s, duty cycle 1%. 2.Pulse test 3.STch = 25Tch 150 THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP80N30W 120 60 T C =25 C 100 o ID , Drain Current (A) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V T C =150 C 50 o 10V 9.0V 8.0V 7.0V V G =5.0V 80 40 60 30 40 20 V G =5.0V 20 10 0 0.0 4.0 8.0 12.0 16.0 0 0.0 4.0 8.0 12.0 16.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.8 T C =25 o C I D =40A 2.3 65 I D =40A V G =10V RDS(ON) (m) Normalized RDS(ON) 4 5 6 7 8 9 10 1.8 60 1.3 55 0.8 50 0.3 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 40 1.2 30 Normalized VGS(th)(V) 1.4 IS(A) 1 T j =150 o C 20 T j =25 o C 0.8 10 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP80N30W f=1.0MHz 12 8000 I D =80A 10 VGS , Gate to Source Voltage (V) 6000 8 C iss C (pF) V DS = 240 V 6 4000 4 2000 2 0 0 40 80 120 160 0 1 6 11 16 21 26 31 C oss C rss 36 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 100us ID (A) 0.1 0.1 0.05 10 1ms 10ms 0.02 0.01 PDM 0.01 t T Single Pulse 1 T c =25 o C Single Pulse 0.1 100ms DC Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A SYMBOLS Millimeters MIN NOM MAX A 4.50 0.90 1.80 1.30 0.40 1.40 19.70 14.70 15.30 4.45 17.50 3.00 4.80 1.00 2.50 -0.60 -20.00 15.00 -5.45 -3.20 5.10 1.30 3.20 2.30 0.90 2.20 20.30 15.30 16.10 6.45 20.50 3.40 c1 D D1 b b1 b2 c c1 D D1 E b1 b2 e L L c b 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 80N30W LOGO YWWSSS Date Code (YWWSSS) Y Last Digit Of The Year WWWeek SSS Sequence 5 |
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